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this is information on a product in full production. october 2014 docid027086 rev 1 1/16 STP16N65M2, stu16n65m2 n-channel 650 v, 0.32 ? typ., 11 a mdmesh m2 power mosfets in to-220 and ipak packages datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. am15572v1 , tab 7$% 72 ,3$. 7$% order code v ds @ t jmax r ds(on) max i d STP16N65M2 710 v 0.36 ? 11 a stu16n65m2 710 v 0.36 ? 11 a table 1. device summary order codes marking package packaging STP16N65M2 16n65m2 to-220 tube stu16n65m2 16n65m2 ipak tube www.st.com
contents STP16N65M2, stu16n65m2 2/16 docid027086 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 to-220, STP16N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 ipak, stu16n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid027086 rev 1 3/16 STP16N65M2, stu16n65m2 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 a i d drain current (continuous) at t c = 100 c 6.9 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 44 a p tot total dissipation at t c = 25 c 110 w dv/dt (2) 2. i sd 11 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v. peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 520 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit to-220 ipak r thj-case thermal resistance junction-case max 1.14 c/w r thj-amb thermal resistance junction-amb max (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board 62.50 100 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 1.9 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 360 mj
electrical characteristics STP16N65M2, stu16n65m2 4/16 docid027086 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0, v ds = 650 v 1 a v gs = 0, v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.5 a 0.32 0.36 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 100 v, f = 1 mhz - 718 - pf c oss output capacitance - 32 - pf c rss reverse transfer capacitance -1.1-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 520 v - 189 - pf r g intrinsic gate resistance f = 1 mhz open drain - 5.2 - ? q g total gate charge v dd = 520 v, i d = 11 a, v gs = 10 v (see figure 17 ) -19.5-nc q gs gate-source charge - 4 - nc q gd gate-drain charge - 8.3 - nc
docid027086 rev 1 5/16 STP16N65M2, stu16n65m2 electrical characteristics 16 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 5.5 a, r g = 4.7 ? , v gs = 10 v (see figure 16 and 21 ) - 11.3 - ns t r rise time - 8.2 - ns t d(off) turn-off delay time - 36 - ns t f fall time - 11.3 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 11 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 44 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage v gs = 0, i sd = 11 a - 1.6 v t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s v dd = 60 v (see figure 18 ) -342 ns q rr reverse recovery charge - 3.5 c i rrm reverse recovery current - 20.4 a t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s v dd = 60 v, t j =150 c (see figure 18 ) -458 ns q rr reverse recovery charge - 4.6 c i rrm reverse recovery current - 20.5 a
electrical characteristics STP16N65M2, stu16n65m2 6/16 docid027086 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv pv 7m ?& 7f ?& 6lqjohsxovh ?v *,3')65 figure 4. safe operating area for ipak figure 5. thermal impedance for ipak i d 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms tj=150c tc=25c single pulse 10 10s gipd221020141405fsr figure 6. output characteristics figure 7. transfer characteristics , ' 9 '6 9 $ 9 *6 9 9 9 9 *,3')65 , ' 9 *6 9 $ 9 '6 9 *,3')65
docid027086 rev 1 7/16 STP16N65M2, stu16n65m2 electrical characteristics 16 figure 8. normalized gate threshold voltage vs. temperature figure 9. normalized v (br)dss vs. temperature v gs(th) 0.8 -75 -25 25 t j (c) (norm) 0.6 75 0.7 0.9 1.0 125 1.1 i d = 250 a gipd180920141442fsr v (br)dss 0.96 -75 -25 75 t j (c) 25 (norm) 0.88 125 0.92 1.00 1.04 1.08 i d = 1ma gipd180920141448fsr figure 10. static drain-source on-resistance figure 11. normalized on-resistance vs. temperature 5 '6rq , ' $ 9 *6 9 *,3')65 r ds(on) 1 -75 -25 75 t j (c) 25 (norm) 0.2 125 0.6 1.4 1.8 2.2 v gs = 10v gipd180920141459fsr figure 12. gate charge vs. gate-source voltage figure 13. capacitance variations 9 *6 4 j q& 9 9 '6 9 9 '' 9 , ' $ 9 '6 *,3')65 & 9 '6 9 s) &lvv &rvv &uvv *,3')65
electrical characteristics STP16N65M2, stu16n65m2 8/16 docid027086 rev 1 figure 14. output capacitance stored energy figure 15. source-drain diode forward characteristics ( 9 '6 9 ?- *,3')65 9 6' , 6' $ 9 7 m ?& 7 m ?& 7 m ?& *,3')65
docid027086 rev 1 9/16 STP16N65M2, stu16n65m2 test circuits 16 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STP16N65M2, stu16n65m2 10/16 docid027086 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid027086 rev 1 11/16 STP16N65M2, stu16n65m2 package mechanical data 16 4.1 to-220, STP16N65M2 figure 22. to-220 type a drawing bw\sh$b5hyb7
package mechanical data STP16N65M2, stu16n65m2 12/16 docid027086 rev 1 table 9. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q2.65 2.95
docid027086 rev 1 13/16 STP16N65M2, stu16n65m2 package mechanical data 16 4.2 ipak, stu16n65m2 figure 23. ipak (to-251) type a drawing 0068771_l
package mechanical data STP16N65M2, stu16n65m2 14/16 docid027086 rev 1 table 10. ipak (to-251) type a mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e2.28 e1 4.40 4.60 h16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
docid027086 rev 1 15/16 STP16N65M2, stu16n65m2 revision history 16 5 revision history table 11. document revision history date revision changes 24-oct-2014 1 first release.
STP16N65M2, stu16n65m2 16/16 docid027086 rev 1 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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